Principal Device Engineer

NexGen Power Systems designs and manufactures gallium nitride (GaN) power transistors for the $4.8B high-voltage (1200 V) power transistor market. GaN makes transistors that are 10 times faster than silicon (Si) power devices enabling economically significant improvements in sophisticated power systems in their physical size, cost and efficiency. GaN offers a quantum leap over Si in power management performance and has significant cost, performance and reliability advantages. Applications for GaN transistors include server power supplies for Data Centers, Motor Drives, Electric Cars and Solar Inverters.

NexGen Power Systems is headquartered in Santa Clara, California. It builds the GaN power devices in a state-of-the-art fabrication facility located in Syracuse, New York.

See our website for more details: www.nexgenpowersystems.com

Job Description

The principal engineer will be responsible for parts of the development of novel GaN power transistors.

Job Responsibilities

• Transistor layout
• Test structure design
• Layout and testing
• Transistor measurement and evaluation
• Documentation of results and specifications
• Interacting with materials and module engineering experts
• Designing experiments and analyzing results
• Developing solutions to problems and innovating using formal education, literature study and expert judgement

Minimum Qualifications

• The candidate must have a PhD in Electrical Engineering, Applied Physics or a related discipline or a Masters degree in these disciplines along with at least 5years of relevant industrial experience
• Demonstrated expertise in semiconductor device physics, technology and device characterization techniques

Preferred Qualifications

• Understanding of power transistors
• Understanding of GaN technology
• Good problem-solving skills showing analytical capabilities and creativity
• Knowledge of device/process simulation tools
• Knowledge in the use of data analysis packages